IPB055N03LGATMA1
| Parameters | |
|---|---|
| Technology | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs | 31nC @ 10V |
| Terminal Position | SINGLE |
| Rise Time | 5.2ns |
| Drain to Source Voltage (Vdss) | 30V |
| Terminal Form | GULL WING |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Vgs (Max) | ±20V |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Fall Time (Typ) | 4 ns |
| Pin Count | 4 |
| Turn-Off Delay Time | 25 ns |
| Continuous Drain Current (ID) | 50A |
| JESD-30 Code | R-PSSO-G2 |
| Gate to Source Voltage (Vgs) | 20V |
| Qualification Status | Not Qualified |
| Drain-source On Resistance-Max | 0.0078Ohm |
| Avalanche Energy Rating (Eas) | 60 mJ |
| Factory Lead Time | 12 Weeks |
| Number of Elements | 1 |
| REACH SVHC | No SVHC |
| Mount | Surface Mount |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| RoHS Status | ROHS3 Compliant |
| Mounting Type | Surface Mount |
| Power Dissipation-Max | 68W Tc |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Number of Pins | 3 |
| Operating Mode | ENHANCEMENT MODE |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Power Dissipation | 68W |
| Packaging | Tape & Reel (TR) |
| Case Connection | DRAIN |
| Published | 2008 |
| Turn On Delay Time | 6.7 ns |
| Series | OptiMOS™ |
| JESD-609 Code | e3 |
| FET Type | N-Channel |
| Pbfree Code | no |
| Part Status | Obsolete |
| Transistor Application | SWITCHING |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Rds On (Max) @ Id, Vgs | 5.5m Ω @ 30A, 10V |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Vgs(th) (Max) @ Id | 2.2V @ 250μA |
| Terminal Finish | Tin (Sn) |
| Input Capacitance (Ciss) (Max) @ Vds | 3200pF @ 15V |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
| Current - Continuous Drain (Id) @ 25°C | 50A Tc |
See Relate Datesheet