IHW30N100R
| Parameters | |
|---|---|
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Surface Mount | NO |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~175°C TJ |
| Packaging | Tube |
| Published | 2008 |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | TIN |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 412W |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 412W |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Halogen Free | Not Halogen Free |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 1kV |
| Max Collector Current | 60A |
| JEDEC-95 Code | TO-247AC |
| Collector Emitter Breakdown Voltage | 1kV |
| Voltage - Collector Emitter Breakdown (Max) | 1000V |
| Collector Emitter Saturation Voltage | 1.75V |
| Test Condition | 600V, 30A, 26 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 1.7V @ 15V, 30A |
| Turn Off Time-Nom (toff) | 988.4 ns |
| IGBT Type | Trench Field Stop |
| Gate Charge | 209nC |
| Current - Collector Pulsed (Icm) | 90A |
| Td (on/off) @ 25°C | -/846ns |
| Switching Energy | 2.1mJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 6.4V |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet