IFS100B12N3E4B31BOSA1

IFS100B12N3E4B31BOSA1

IGBT MOD 1200V 200A 515W


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IFS100B12N3E4B31BOSA1
  • Package: Module
  • Datasheet: PDF
  • Stock: 564
  • Description: IGBT MOD 1200V 200A 515W (Kg)

Details

Tags

Parameters
Factory Lead Time 16 Weeks
Mount Base
Mounting Type Chassis Mount
Package / Case Module
Operating Temperature -40°C~150°C
Published 2002
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Configuration Full Bridge
Power - Max 515W
Halogen Free Not Halogen Free
Input Standard
Current - Collector Cutoff (Max) 1mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 200A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 100A
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 6.3nF @ 25V
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
See Relate Datesheet

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