| Parameters | |
|---|---|
| Mounting Type | Surface Mount | 
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 
| Surface Mount | YES | 
| Transistor Element Material | SILICON | 
| Operating Temperature | -55°C~175°C TJ | 
| Packaging | Tape & Reel (TR) | 
| Series | UltraFET™ | 
| JESD-609 Code | e3 | 
| Pbfree Code | yes | 
| Part Status | Obsolete | 
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 
| Number of Terminations | 2 | 
| Terminal Finish | TIN | 
| Technology | MOSFET (Metal Oxide) | 
| Terminal Position | SINGLE | 
| Terminal Form | GULL WING | 
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | 
| Reach Compliance Code | unknown | 
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | 
| Pin Count | 4 | 
| JESD-30 Code | R-PSSO-G2 | 
| Qualification Status | COMMERCIAL | 
| Number of Elements | 1 | 
| Configuration | SINGLE WITH BUILT-IN DIODE | 
| Power Dissipation-Max | 285W Tc | 
| Operating Mode | ENHANCEMENT MODE | 
| Case Connection | DRAIN | 
| FET Type | N-Channel | 
| Transistor Application | SWITCHING | 
| Rds On (Max) @ Id, Vgs | 8m Ω @ 75A, 10V | 
| Vgs(th) (Max) @ Id | 4V @ 250μA | 
| Input Capacitance (Ciss) (Max) @ Vds | 3.2pF @ 25V | 
| Current - Continuous Drain (Id) @ 25°C | 75A Tc | 
| Gate Charge (Qg) (Max) @ Vgs | 210nC @ 20V | 
| Drain to Source Voltage (Vdss) | 55V | 
| Drive Voltage (Max Rds On,Min Rds On) | 10V | 
| Vgs (Max) | ±20V | 
| Drain Current-Max (Abs) (ID) | 75A | 
| Drain-source On Resistance-Max | 0.008Ohm | 
| DS Breakdown Voltage-Min | 55V | 
| RoHS Status | ROHS3 Compliant |