HGT1S2N120CN
| Parameters | |
|---|---|
| Mounting Type | Through Hole |
| Package / Case | TO-262-3 Long Leads, I2Pak, TO-262AA |
| Surface Mount | NO |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Number of Terminations | 3 |
| Terminal Finish | MATTE TIN |
| Additional Feature | LOW CONDUCTION LOSS, AVALANCHE RATED |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | NOT APPLICABLE |
| Time@Peak Reflow Temperature-Max (s) | NOT APPLICABLE |
| Pin Count | 3 |
| JESD-30 Code | R-PSIP-T3 |
| Qualification Status | COMMERCIAL |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Power - Max | 104W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Voltage - Collector Emitter Breakdown (Max) | 1.2V |
| Current - Collector (Ic) (Max) | 13A |
| Turn On Time | 32 ns |
| Test Condition | 960V, 2.6A, 51 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 2.6A |
| Turn Off Time-Nom (toff) | 585 ns |
| IGBT Type | NPT |
| Gate Charge | 30nC |
| Current - Collector Pulsed (Icm) | 20A |
| Td (on/off) @ 25°C | 25ns/205ns |
| Switching Energy | 96μJ (on), 355μJ (off) |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet