 
    | Parameters | |
|---|---|
| Lifecycle Status | NRND (Last Updated: 7 months ago) | 
| Mount | Through Hole | 
| Mounting Type | Through Hole | 
| Package / Case | ISOWATT218FX | 
| Number of Pins | 3 | 
| Transistor Element Material | SILICON | 
| Operating Temperature | 150°C TJ | 
| Packaging | Tube | 
| JESD-609 Code | e3 | 
| Part Status | Not For New Designs | 
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 
| Number of Terminations | 3 | 
| ECCN Code | EAR99 | 
| Terminal Finish | Matte Tin (Sn) | 
| Subcategory | Other Transistors | 
| Voltage - Rated DC | 800V | 
| Max Power Dissipation | 75W | 
| Current Rating | 24A | 
| Base Part Number | HD1750 | 
| Pin Count | 3 | 
| Number of Elements | 1 | 
| Element Configuration | Single | 
| Power Dissipation | 75W | 
| Case Connection | ISOLATED | 
| Transistor Application | AMPLIFIER | 
| Polarity/Channel Type | NPN | 
| Transistor Type | NPN | 
| Collector Emitter Voltage (VCEO) | 800V | 
| Max Collector Current | 24A | 
| DC Current Gain (hFE) (Min) @ Ic, Vce | 6.5 @ 12A 5V | 
| Current - Collector Cutoff (Max) | 200μA | 
| Vce Saturation (Max) @ Ib, Ic | 3V @ 3A, 12A | 
| Collector Emitter Breakdown Voltage | 800V | 
| Collector Emitter Saturation Voltage | 3V | 
| Emitter Base Voltage (VEBO) | 10V | 
| hFE Min | 30 | 
| Height | 26.7mm | 
| Length | 15.7mm | 
| Width | 5.7mm | 
| Radiation Hardening | No | 
| REACH SVHC | No SVHC | 
| RoHS Status | ROHS3 Compliant | 
| Lead Free | Lead Free |