| Parameters | |
|---|---|
| Lifecycle Status | NRND (Last Updated: 7 months ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | ISOWATT218FX |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| JESD-609 Code | e3 |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 800V |
| Max Power Dissipation | 75W |
| Current Rating | 24A |
| Base Part Number | HD1750 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 75W |
| Case Connection | ISOLATED |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 800V |
| Max Collector Current | 24A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 6.5 @ 12A 5V |
| Current - Collector Cutoff (Max) | 200μA |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 3A, 12A |
| Collector Emitter Breakdown Voltage | 800V |
| Collector Emitter Saturation Voltage | 3V |
| Emitter Base Voltage (VEBO) | 10V |
| hFE Min | 30 |
| Height | 26.7mm |
| Length | 15.7mm |
| Width | 5.7mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |