GP1S096HCZ0F
| Parameters | |
|---|---|
| Type | Unamplified |
| Terminal Finish | Tin/Copper (Sn/Cu) |
| Number of Functions | 1 |
| Output Voltage | 20V |
| Number of Elements | 1 |
| Output Configuration | Phototransistor |
| Power Dissipation | 100mW |
| Output Current | 20mA |
| Forward Current | 50mA |
| Response Time | 50μs, 50μs |
| Rise Time | 150μs |
| Forward Voltage | 1.2V |
| Fall Time (Typ) | 150 μs |
| Collector Emitter Voltage (VCEO) | 35V |
| Max Collector Current | 20mA |
| Sensing Distance | 0.039 (1mm) |
| Collector Emitter Breakdown Voltage | 35V |
| Reverse Breakdown Voltage | 6V |
| Sensing Method | Through-Beam |
| Input Current | 20mA |
| Reverse Voltage (DC) | 6V |
| Slot Width-Nom | 1mm |
| On-state Collector Current-Nom | 0.1mA |
| Height | 2.9mm |
| Width | 3.5mm |
| Radiation Hardening | No |
| REACH SVHC | Unknown |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Contact Plating | Copper, Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | PCB Mount |
| Number of Pins | 4 |
| Operating Temperature | -25°C~85°C |
| Packaging | Tube |
| Published | 2006 |
| JESD-609 Code | e2 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
See Relate Datesheet