FZ1000R33HE3BOSA1
| Parameters | |
|---|---|
| VCEsat-Max | 3.1 V |
| RoHS Status | RoHS Compliant |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Surface Mount | NO |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~150°C |
| Pbfree Code | no |
| Part Status | Active |
| Number of Terminations | 7 |
| Subcategory | Insulated Gate BIP Transistors |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| Reach Compliance Code | compliant |
| Pin Count | 7 |
| JESD-30 Code | R-XUFM-X7 |
| Number of Elements | 2 |
| Configuration | Single Switch |
| Case Connection | ISOLATED |
| Power - Max | 1600W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Input | Standard |
| Current - Collector Cutoff (Max) | 5mA |
| Voltage - Collector Emitter Breakdown (Max) | 3300V |
| Current - Collector (Ic) (Max) | 1000A |
| Power Dissipation-Max (Abs) | 9600W |
| Turn On Time | 1150 ns |
| Vce(on) (Max) @ Vge, Ic | 3.1V @ 15V, 100A |
| Turn Off Time-Nom (toff) | 3550 ns |
| IGBT Type | Trench Field Stop |
| NTC Thermistor | No |
| Gate-Emitter Voltage-Max | 20V |
| Input Capacitance (Cies) @ Vce | 190nF @ 25V |
See Relate Datesheet