FT150R12KE3G_B4
| Parameters | |
|---|---|
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Input | Standard |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Max Collector Current | 200A |
| Current - Collector Cutoff (Max) | 5mA |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Power Dissipation-Max (Abs) | 700W |
| Turn On Time | 350 ns |
| Vce(on) (Max) @ Vge, Ic | 2.15V @ 15V, 150A |
| Turn Off Time-Nom (toff) | 850 ns |
| NTC Thermistor | Yes |
| Gate-Emitter Voltage-Max | 20V |
| Input Capacitance (Cies) @ Vce | 10.5nF @ 25V |
| VCEsat-Max | 2.15 V |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Mount | Screw |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Number of Pins | 39 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| JESD-609 Code | e0 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 39 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN LEAD |
| Subcategory | Insulated Gate BIP Transistors |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| Pin Count | 39 |
| Number of Elements | 3 |
| Configuration | Three Phase Inverter |
| Case Connection | ISOLATED |
| Power - Max | 700W |
See Relate Datesheet