FQU10N20CTU
| Parameters | |
|---|---|
| Gate Charge (Qg) (Max) @ Vgs | 26nC @ 10V |
| Rise Time | 92ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 72 ns |
| Turn-Off Delay Time | 70 ns |
| Continuous Drain Current (ID) | 7.8A |
| Gate to Source Voltage (Vgs) | 30V |
| Factory Lead Time | 9 Weeks |
| Drain to Source Breakdown Voltage | 200V |
| Lifecycle Status | ACTIVE (Last Updated: 5 days ago) |
| Radiation Hardening | No |
| Mount | Through Hole |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Mounting Type | Through Hole |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Number of Pins | 3 |
| Weight | 343.08mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 1998 |
| Series | QFET® |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 200V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 7.8A |
| Number of Elements | 1 |
| Power Dissipation-Max | 50W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 50W |
| Turn On Delay Time | 11 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 360m Ω @ 3.9A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 510pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 7.8A Tc |
See Relate Datesheet