FQS4903TF
| Parameters | |
|---|---|
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 500V |
| Max Power Dissipation | 2W |
| Terminal Form | GULL WING |
| Current Rating | 370mA |
| Base Part Number | FQS4903 |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| Turn On Delay Time | 5.5 ns |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 6.2 Ω @ 185mA, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 200pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 8.2nC @ 10V |
| Rise Time | 20ns |
| Fall Time (Typ) | 45 ns |
| Turn-Off Delay Time | 20 ns |
| Continuous Drain Current (ID) | 370mA |
| Gate to Source Voltage (Vgs) | 25V |
| Drain Current-Max (Abs) (ID) | 0.37A |
| Drain to Source Breakdown Voltage | 500V |
| Dual Supply Voltage | 500V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Standard |
| Nominal Vgs | 4 V |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 5 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Weight | 230.4mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | QFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
See Relate Datesheet