FQS4900TF
| Parameters | |
|---|---|
| Lead Free | Lead Free |
| Factory Lead Time | 13 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Weight | 230.4mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2002 |
| Series | QFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 2W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | FQS4900 |
| Qualification Status | Not Qualified |
| Number of Elements | 2 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| FET Type | N and P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 550m Ω @ 650mA, 10V |
| Vgs(th) (Max) @ Id | 1.95V @ 20mA |
| Current - Continuous Drain (Id) @ 25°C | 1.3A 300mA |
| Gate Charge (Qg) (Max) @ Vgs | 2.1nC @ 5V |
| Rise Time | 25ns |
| Drain to Source Voltage (Vdss) | 60V 300V |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
| Fall Time (Typ) | 47 ns |
| Turn-Off Delay Time | 35 ns |
| Continuous Drain Current (ID) | 1.3A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.65Ohm |
| Drain to Source Breakdown Voltage | -300V |
| Pulsed Drain Current-Max (IDM) | 5.2A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Standard |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet