FP50R06W2E3B11BOMA1

FP50R06W2E3B11BOMA1

IGBT MODULE 600V 65A 175W


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-FP50R06W2E3B11BOMA1
  • Package: Module
  • Datasheet: PDF
  • Stock: 830
  • Description: IGBT MODULE 600V 65A 175W (Kg)

Details

Tags

Parameters
Published 2002
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 23
ECCN Code EAR99
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 7
Configuration Three Phase Inverter
Case Connection ISOLATED
Power - Max 175W
Transistor Application POWER CONTROL
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 65A
Current - Collector Cutoff (Max) 1mA
Current - Collector (Ic) (Max) 65A
Turn On Time 45 ns
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 50A
Turn Off Time-Nom (toff) 355 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 3.1nF @ 25V
RoHS Status RoHS Compliant
Lead Free Contains Lead
Factory Lead Time 16 Weeks
Mount Screw
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 23
Transistor Element Material SILICON
Operating Temperature -40°C~150°C
See Relate Datesheet

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