FP100R07N3E4B11BOSA1

FP100R07N3E4B11BOSA1

IGBT MODULE VCES 600V 100A


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-FP100R07N3E4B11BOSA1
  • Package: Module
  • Datasheet: PDF
  • Stock: 288
  • Description: IGBT MODULE VCES 600V 100A (Kg)

Details

Tags

Parameters
Factory Lead Time 12 Weeks
Mount Screw
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 43
Transistor Element Material SILICON
Operating Temperature -40°C~150°C
Published 2002
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 43
ECCN Code EAR99
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 7
Configuration Three Phase Inverter
Case Connection ISOLATED
Power - Max 335W
Transistor Application POWER CONTROL
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 650V
Current - Collector Cutoff (Max) 1mA
Current - Collector (Ic) (Max) 100A
Turn On Time 100 ns
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 100A
Turn Off Time-Nom (toff) 370 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 6.2nF @ 25V
RoHS Status RoHS Compliant
Lead Free Contains Lead
See Relate Datesheet

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