 
    | Parameters | |
|---|---|
| Max Collector Current | 1A | 
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 500mA 2V | 
| Current - Collector Cutoff (Max) | 100nA ICBO | 
| Vce Saturation (Max) @ Ib, Ic | 1V @ 200mA, 2A | 
| Collector Emitter Breakdown Voltage | 30V | 
| Transition Frequency | 150MHz | 
| Collector Emitter Saturation Voltage | 1V | 
| Max Breakdown Voltage | 30V | 
| Collector Base Voltage (VCBO) | 50V | 
| Emitter Base Voltage (VEBO) | 5V | 
| Continuous Collector Current | 1A | 
| Height | 1.1mm | 
| Length | 3mm | 
| Width | 1.4mm | 
| Radiation Hardening | No | 
| REACH SVHC | No SVHC | 
| RoHS Status | ROHS3 Compliant | 
| Lead Free | Lead Free | 
| Factory Lead Time | 15 Weeks | 
| Mount | Surface Mount | 
| Mounting Type | Surface Mount | 
| Package / Case | TO-236-3, SC-59, SOT-23-3 | 
| Number of Pins | 3 | 
| Weight | 7.994566mg | 
| Transistor Element Material | SILICON | 
| Operating Temperature | -55°C~150°C TJ | 
| Packaging | Cut Tape (CT) | 
| Published | 2006 | 
| JESD-609 Code | e3 | 
| Pbfree Code | yes | 
| Part Status | Active | 
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 
| Number of Terminations | 3 | 
| ECCN Code | EAR99 | 
| Terminal Finish | Matte Tin (Sn) - annealed | 
| Voltage - Rated DC | 30V | 
| Max Power Dissipation | 500mW | 
| Terminal Position | DUAL | 
| Terminal Form | GULL WING | 
| Peak Reflow Temperature (Cel) | 260 | 
| Current Rating | 1A | 
| Frequency | 150MHz | 
| Time@Peak Reflow Temperature-Max (s) | 40 | 
| Base Part Number | FMMT449 | 
| Number of Elements | 1 | 
| Element Configuration | Single | 
| Power Dissipation | 500mW | 
| Transistor Application | SWITCHING | 
| Gain Bandwidth Product | 150MHz | 
| Polarity/Channel Type | NPN | 
| Transistor Type | NPN | 
| Collector Emitter Voltage (VCEO) | 30V |