FJP2160DTU
| Parameters | |
|---|---|
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 800V |
| Max Collector Current | 2A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 400mA 3V |
| Current - Collector Cutoff (Max) | 100μA |
| Vce Saturation (Max) @ Ib, Ic | 750mV @ 330mA, 1A |
| Collector Emitter Breakdown Voltage | 800V |
| Gate to Source Voltage (Vgs) | 20V |
| Transition Frequency | 25MHz |
| Frequency - Transition | 5MHz |
| Collector Base Voltage (VCBO) | 1.6kV |
| Emitter Base Voltage (VEBO) | 12V |
| hFE Min | 20 |
| Height | 15.95mm |
| Length | 9.9mm |
| Width | 4.5mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 6 Weeks |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 week ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Weight | 1.8g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~125°C TJ |
| Packaging | Tube |
| Published | 2012 |
| Series | ESBC™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| HTS Code | 8541.29.00.95 |
| Subcategory | Other Transistors |
| Max Power Dissipation | 100W |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN FET AND DIODE |
| Power - Max | 100W |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | NPN |
See Relate Datesheet