| Parameters | |
|---|---|
| hFE Min | 5 |
| Max Junction Temperature (Tj) | 150°C |
| Height | 29mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 19 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-264-3, TO-264AA |
| Number of Pins | 3 |
| Weight | 6.756g |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Published | 2014 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 800V |
| Max Power Dissipation | 200W |
| Current Rating | 20A |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 200W |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 800V |
| Max Collector Current | 30A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 5.5 @ 11A 5V |
| Current - Collector Cutoff (Max) | 1mA |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 2.75A, 11A |
| Collector Emitter Breakdown Voltage | 800V |
| Collector Emitter Saturation Voltage | 3V |
| Collector Base Voltage (VCBO) | 1.7kV |
| Emitter Base Voltage (VEBO) | 6V |