FJBE2150DTU
| Parameters | |
|---|---|
| Factory Lead Time | 6 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Number of Pins | 3 |
| Weight | 1.88g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~125°C TJ |
| Packaging | Tube |
| Published | 2015 |
| Series | ESBC™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| HTS Code | 8541.29.00.95 |
| Subcategory | Other Transistors |
| Max Power Dissipation | 110W |
| Terminal Form | GULL WING |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Case Connection | COLLECTOR |
| Power - Max | 110W |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 5MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 800V |
| Max Collector Current | 2A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 400mA 3V |
| Current - Collector Cutoff (Max) | 100μA |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 330mA, 1A |
| Collector Emitter Breakdown Voltage | 800V |
| Gate to Source Voltage (Vgs) | 20V |
| Transition Frequency | 5MHz |
| Collector Emitter Saturation Voltage | 250mV |
| Collector Base Voltage (VCBO) | 1.5kV |
| Emitter Base Voltage (VEBO) | 12V |
| hFE Min | 20 |
| Height | 4.83mm |
| Length | 10.67mm |
| Width | 9.85mm |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet