FGA25N120ANTDTU-F109
| Parameters | |
|---|---|
| Factory Lead Time | 6 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Number of Pins | 3 |
| Weight | 6.401g |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2004 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 312W |
| Base Part Number | FGA25N120A |
| Rise Time-Max | 90ns |
| Element Configuration | Single |
| Input Type | Standard |
| Power - Max | 312W |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Max Collector Current | 50A |
| Reverse Recovery Time | 350 ns |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Test Condition | 600V, 25A, 10 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.65V @ 15V, 50A |
| IGBT Type | NPT and Trench |
| Gate Charge | 200nC |
| Current - Collector Pulsed (Icm) | 90A |
| Td (on/off) @ 25°C | 50ns/190ns |
| Switching Energy | 4.1mJ (on), 960μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 7.5V |
| Fall Time-Max (tf) | 180ns |
| Height | 18.9mm |
| Length | 15.8mm |
| Width | 5mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet