| Parameters | |
|---|---|
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 3 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 4-UFBGA, WLCSP |
| Number of Pins | 4 |
| Weight | 42mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~125°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2016 |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature | ESD PROTECTION |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | BOTTOM |
| Terminal Form | BALL |
| Number of Elements | 1 |
| Power Dissipation-Max | 1W Ta |
| Element Configuration | Single |
| Operating Mode | DEPLETION MODE |
| Power Dissipation | 1W |
| Turn On Delay Time | 3.1 ns |
| Forward Current | 1.1A |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 462m Ω @ 300mA, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 85pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 1.1A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 1nC @ 4.5V |
| Rise Time | 1.9ns |
| Drive Voltage (Max Rds On,Min Rds On) | 3.2V 4.5V |
| Vgs (Max) | +5.5V, -0.3V |
| Fall Time (Typ) | 2.7 ns |
| Turn-Off Delay Time | 9.6 ns |
| Reverse Recovery Time | 29 ns |
| Continuous Drain Current (ID) | 1.1A |
| Threshold Voltage | 700mV |
| Peak Reverse Current | 300μA |
| Max Repetitive Reverse Voltage (Vrrm) | 25V |
| Gate to Source Voltage (Vgs) | 5.5V |
| Drain-source On Resistance-Max | 0.52Ohm |
| Drain to Source Breakdown Voltage | 30V |
| FET Feature | Schottky Diode (Body) |
| Nominal Vgs | 700 mV |
| Feedback Cap-Max (Crss) | 25 pF |
| Height | 332μm |
| Length | 1mm |
| Width | 1mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |