FDT86246
| Parameters | |
|---|---|
| Fall Time (Typ) | 1.2 ns |
| Turn-Off Delay Time | 4.6 ns |
| Continuous Drain Current (ID) | 2A |
| Threshold Voltage | 3.1V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 2A |
| Drain-source On Resistance-Max | 0.236Ohm |
| Drain to Source Breakdown Voltage | 150V |
| Nominal Vgs | 3.1 V |
| Feedback Cap-Max (Crss) | 5 pF |
| Height | 1.7mm |
| Length | 3.7mm |
| Width | 6.7mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 12 hours ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 4 |
| Weight | 250.2mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | ULTRA-LOW RESISTANCE |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Number of Elements | 1 |
| Power Dissipation-Max | 2.2W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.2W |
| Case Connection | DRAIN |
| Turn On Delay Time | 7.8 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 236m Ω @ 2A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 215pF @ 75V |
| Current - Continuous Drain (Id) @ 25°C | 2A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 4nC @ 10V |
| Rise Time | 2.3ns |
| Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
| Vgs (Max) | ±20V |
See Relate Datesheet