FDMS7620S
| Parameters | |
|---|---|
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Number of Pins | 8 |
| Weight | 211mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| Series | PowerTrench® |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 2.5W |
| JESD-30 Code | R-PDSO-N6 |
| Number of Elements | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.2W |
| Case Connection | DRAIN SOURCE |
| Turn On Delay Time | 6.6 ns |
| Power - Max | 1W |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 20m Ω @ 10.1A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 608pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 10.1A 12.4A |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 10V |
| Rise Time | 1.8ns |
| Fall Time (Typ) | 1.5 ns |
| Turn-Off Delay Time | 17.4 ns |
| Continuous Drain Current (ID) | 12.4A |
| Threshold Voltage | 2.2V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 0.0101A |
| Drain to Source Breakdown Voltage | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Feedback Cap-Max (Crss) | 31 pF |
| Height | 750μm |
| Length | 5mm |
| Width | 6mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 16 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 6 days ago) |
| Mount | Surface Mount |
See Relate Datesheet