| Parameters | |
|---|---|
| Package / Case | 8-PowerWDFN |
| Number of Pins | 8 |
| Weight | 210mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| Series | UltraFET™ |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Resistance | 77MOhm |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 200V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Current Rating | 3.7A |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Power Dissipation-Max | 2.5W Ta 78W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.5W |
| Turn On Delay Time | 22 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 77m Ω @ 3.7A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2315pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 3.7A Ta 20A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 42nC @ 10V |
| Rise Time | 11ns |
| Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 10 ns |
| Turn-Off Delay Time | 36 ns |
| Continuous Drain Current (ID) | 3.7A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 200V |
| Pulsed Drain Current-Max (IDM) | 20A |
| Height | 750μm |
| Length | 5mm |
| Width | 6mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 10 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Contact Plating | Gold |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |