FDMC86116LZ

FDMC86116LZ

FDMC86116LZ datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FDMC86116LZ
  • Package: 8-PowerWDFN
  • Datasheet: PDF
  • Stock: 204
  • Description: FDMC86116LZ datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

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Parameters
Power Dissipation-Max 2.3W Ta 19W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 19W
Case Connection DRAIN
Turn On Delay Time 4.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 103m Ω @ 3.3A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 310pF @ 50V
Current - Continuous Drain (Id) @ 25°C 3.3A Ta 7.5A Tc
Gate Charge (Qg) (Max) @ Vgs 6nC @ 10V
Rise Time 1.3ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 1.4 ns
Turn-Off Delay Time 10 ns
Continuous Drain Current (ID) 3.3A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 7.5A
Drain to Source Breakdown Voltage 100V
Height 750μm
Length 3.3mm
Width 3.3mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 14 hours ago)
Contact Plating Gold
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Number of Pins 8
Weight 180mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series PowerTrench®
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code S-PDSO-N5
Number of Elements 1
See Relate Datesheet

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