FDMC8462
| Parameters | |
|---|---|
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Resistance | 5.8MOhm |
| Terminal Finish | Nickel/Palladium (Ni/Pd) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| JESD-30 Code | S-PDSO-N5 |
| Number of Elements | 1 |
| Power Dissipation-Max | 2W Ta 41W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| Case Connection | DRAIN |
| Turn On Delay Time | 12 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 5.8m Ω @ 13.5A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2660pF @ 20V |
| Current - Continuous Drain (Id) @ 25°C | 14A Ta 20A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 43nC @ 10V |
| Rise Time | 4ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 3 ns |
| Turn-Off Delay Time | 27 ns |
| Continuous Drain Current (ID) | 14A |
| Threshold Voltage | 2V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 64A |
| Drain to Source Breakdown Voltage | 40V |
| Pulsed Drain Current-Max (IDM) | 50A |
| Height | 1.05mm |
| Length | 3.3mm |
| Width | 3.3mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 43 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 11 hours ago) |
| Contact Plating | Gold |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Number of Pins | 8 |
| Weight | 32.13mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | PowerTrench® |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Active |
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