| Parameters | |
|---|---|
| Published | 2006 |
| Series | PowerTrench® |
| JESD-609 Code | e4 |
| Drain to Source Voltage (Vdss) | 30V |
| Pbfree Code | yes |
| Part Status | Active |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| Vgs (Max) | ±25V |
| Termination | SMD/SMT |
| Fall Time (Typ) | 31 ns |
| Turn-Off Delay Time | 43 ns |
| ECCN Code | EAR99 |
| Resistance | 35MOhm |
| Continuous Drain Current (ID) | -6.8A |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
| Threshold Voltage | -2.1V |
| Subcategory | Other Transistors |
| Gate to Source Voltage (Vgs) | 25V |
| Voltage - Rated DC | -30V |
| Drain to Source Breakdown Voltage | -30V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Pulsed Drain Current-Max (IDM) | 24A |
| Dual Supply Voltage | -30V |
| Terminal Form | NO LEAD |
| Nominal Vgs | 25 V |
| Peak Reflow Temperature (Cel) | 260 |
| Height | 750μm |
| Current Rating | -6.8A |
| Length | 2mm |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Width | 2mm |
| REACH SVHC | No SVHC |
| Qualification Status | Not Qualified |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Number of Elements | 1 |
| Power Dissipation-Max | 2.4W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.4W |
| Turn On Delay Time | 6 ns |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 35m Ω @ 6.8A, 10V |
| Factory Lead Time | 16 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Mount | Surface Mount |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Mounting Type | Surface Mount |
| Package / Case | 6-VDFN Exposed Pad |
| Input Capacitance (Ciss) (Max) @ Vds | 1070pF @ 15V |
| Number of Pins | 6 |
| Weight | 30mg |
| Current - Continuous Drain (Id) @ 25°C | 6.8A Ta |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V |
| Packaging | Tape & Reel (TR) |
| Rise Time | 21ns |