FDG6301N-F085
| Parameters | |
|---|---|
| Threshold Voltage | 850mV |
| Gate to Source Voltage (Vgs) | 8V |
| Drain-source On Resistance-Max | 4Ohm |
| Drain to Source Breakdown Voltage | 25V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Max Junction Temperature (Tj) | 150°C |
| FET Feature | Logic Level Gate |
| Height | 1.1mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 42 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 6 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Number of Pins | 6 |
| Weight | 28mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | Automotive, AEC-Q101 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 300mW |
| Terminal Form | GULL WING |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 300mW |
| Turn On Delay Time | 5 ns |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 4 Ω @ 220mA, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 9.5pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 0.4nC @ 4.5V |
| Rise Time | 4.5ns |
| Drain to Source Voltage (Vdss) | 25V |
| Fall Time (Typ) | 3.2 ns |
| Turn-Off Delay Time | 4 ns |
| Continuous Drain Current (ID) | 220mA |
See Relate Datesheet