FDFME2P823ZT
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-UFDFN Exposed Pad |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | PowerTrench® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Additional Feature | ESD PROTECTION |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Number of Elements | 1 |
| Power Dissipation-Max | 1.4W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.3W |
| Case Connection | DRAIN |
| Turn On Delay Time | 4.7 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 142m Ω @ 2.3A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 405pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 2.6A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 7.7nC @ 4.5V |
| Rise Time | 4.8ns |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
| Vgs (Max) | ±8V |
| Fall Time (Typ) | 16 ns |
| Turn-Off Delay Time | 33 ns |
| Continuous Drain Current (ID) | 2.6A |
| Threshold Voltage | -600mV |
| Gate to Source Voltage (Vgs) | 8V |
| Drain Current-Max (Abs) (ID) | 2.3A |
| Drain to Source Breakdown Voltage | -20V |
| FET Feature | Schottky Diode (Isolated) |
| Nominal Vgs | -600 mV |
| Feedback Cap-Max (Crss) | 75 pF |
| Height | 550μm |
| Length | 1.6mm |
| Width | 1.6mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
See Relate Datesheet