Parameters | |
---|---|
Factory Lead Time | 5 Weeks |
Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Number of Pins | 6 |
Weight | 36mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Series | PowerTrench® |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
ECCN Code | EAR99 |
Resistance | 500MOhm |
Terminal Finish | Tin (Sn) |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 100V |
Max Power Dissipation | 960mW |
Terminal Form | GULL WING |
Current Rating | 1A |
Number of Elements | 2 |
Element Configuration | Dual |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 960mW |
Turn On Delay Time | 8 ns |
Power - Max | 700mW |
FET Type | 2 N-Channel (Dual) |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 500m Ω @ 1A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 153pF @ 50V |
Gate Charge (Qg) (Max) @ Vgs | 5nC @ 10V |
Rise Time | 4ns |
Fall Time (Typ) | 4 ns |
Turn-Off Delay Time | 11 ns |
Continuous Drain Current (ID) | 1A |
Threshold Voltage | 2.6V |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 1A |
Drain to Source Breakdown Voltage | 100V |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
FET Feature | Standard |
Height | 1mm |
Length | 3mm |
Width | 1.7mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |