FDB8896-F085
| Parameters | |
|---|---|
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 80W |
| Case Connection | DRAIN |
| Turn On Delay Time | 9 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 5.7m Ω @ 35A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2525pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 19A Ta 93A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 67nC @ 10V |
| Rise Time | 102ns |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 week ago) |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Mount | Surface Mount |
| Vgs (Max) | ±20V |
| Mounting Type | Surface Mount |
| Fall Time (Typ) | 44 ns |
| Turn-Off Delay Time | 58 ns |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Continuous Drain Current (ID) | 93A |
| Gate to Source Voltage (Vgs) | 20V |
| Number of Pins | 3 |
| Drain Current-Max (Abs) (ID) | 19A |
| Drain-source On Resistance-Max | 0.0068Ohm |
| Weight | 1.31247g |
| Drain to Source Breakdown Voltage | 30V |
| Transistor Element Material | SILICON |
| Avalanche Energy Rating (Eas) | 74 mJ |
| Radiation Hardening | No |
| Operating Temperature | -55°C~175°C TJ |
| RoHS Status | RoHS Compliant |
| Packaging | Tape & Reel (TR) |
| Series | Automotive, AEC-Q101, PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Power Dissipation-Max | 80W Tc |
| Element Configuration | Single |
See Relate Datesheet