FD650R17IE4BOSA2

FD650R17IE4BOSA2

IGBT MOD 1700V 930A 4150W


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-FD650R17IE4BOSA2
  • Package: Module
  • Datasheet: PDF
  • Stock: 293
  • Description: IGBT MOD 1700V 930A 4150W (Kg)

Details

Tags

Parameters
Current - Collector (Ic) (Max) 930A
Turn On Time 720 ns
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 650A
Turn Off Time-Nom (toff) 1870 ns
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 54nF @ 25V
RoHS Status ROHS3 Compliant
Factory Lead Time 14 Weeks
Mounting Type Chassis Mount
Package / Case Module
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -40°C~150°C
Published 2002
Series PrimePack™2
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 10
ECCN Code EAR99
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 10
JESD-30 Code R-XUFM-X10
Qualification Status Not Qualified
Number of Elements 1
Configuration Single
Case Connection ISOLATED
Power - Max 4150W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 5mA
Voltage - Collector Emitter Breakdown (Max) 1700V
See Relate Datesheet

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