EMX5T2R
| Parameters | |
|---|---|
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2007 |
| JESD-609 Code | e2 |
| Pbfree Code | yes |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN COPPER |
| HTS Code | 8541.21.00.75 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 11V |
| Max Power Dissipation | 150mW |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 50mA |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Base Part Number | MX5 |
| Pin Count | 6 |
| Number of Elements | 2 |
| Polarity | NPN |
| Element Configuration | Dual |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 3.2 GHz |
| Transistor Type | 2 NPN (Dual) |
| Collector Emitter Voltage (VCEO) | 11V |
| Max Collector Current | 50mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 56 @ 5mA 10V |
| Current - Collector Cutoff (Max) | 500nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 10mA |
| Collector Emitter Breakdown Voltage | 11V |
| Transition Frequency | 3200MHz |
| Max Breakdown Voltage | 11V |
| Collector Base Voltage (VCBO) | 20V |
| Emitter Base Voltage (VEBO) | 3V |
| hFE Min | 56 |
| Collector-Base Capacitance-Max | 1.55pF |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
See Relate Datesheet