EMF9T2R
| Parameters | |
|---|---|
| Drain-source On Resistance-Max | 8Ohm |
| Transition Frequency | 320MHz |
| DS Breakdown Voltage-Min | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Collector Current-Max (IC) | 0.5A |
| DC Current Gain-Min (hFE) | 270 |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 10 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Number of Pins | 6 |
| Packaging | Tape & Reel (TR) |
| Published | 2008 |
| JESD-609 Code | e2 |
| Pbfree Code | yes |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN COPPER |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Applications | General Purpose |
| Voltage - Rated | 12V NPN 30V N Channel |
| Subcategory | Other Transistors |
| Current Rating (Amps) | 500mA NPN 100mA N Channel |
| Max Power Dissipation | 150mW |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 100mA |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Pin Count | 6 |
| Max Output Current | 100mA |
| Number of Elements | 1 |
| Polarity | NPN, PNP |
| Number of Channels | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Max Output Voltage | 12V |
| Transistor Application | SWITCHING |
| Transistor Type | NPN, N-Channel |
| Collector Emitter Breakdown Voltage | 12V |
| Drain Current-Max (Abs) (ID) | 0.1A |
See Relate Datesheet