| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SMD, Flat Lead |
| Surface Mount | YES |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2007 |
| JESD-609 Code | e6 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Bismuth (Sn/Bi) |
| Max Power Dissipation | 1.5W |
| Base Part Number | ECH8654 |
| Pin Count | 8 |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.5W |
| Turn On Delay Time | 14 ns |
| FET Type | 2 P-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 38m Ω @ 3A, 4.5V |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 960pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
| Rise Time | 55ns |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time (Typ) | 68 ns |
| Turn-Off Delay Time | 92 ns |
| Continuous Drain Current (ID) | 5A |
| Gate to Source Voltage (Vgs) | 10V |
| Drain Current-Max (Abs) (ID) | 5A |
| Pulsed Drain Current-Max (IDM) | 40A |
| DS Breakdown Voltage-Min | 20V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Height | 900μm |
| Length | 2.9mm |
| Width | 2.3mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |