DS3170N
| Parameters | |
|---|---|
| Mounting Type | Surface Mount |
| Package / Case | 100-LBGA, CSBGA |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~85°C |
| Packaging | Tray |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Number of Terminations | 8 |
| Terminal Finish | NICKEL PALLADIUM GOLD |
| Voltage - Supply | 3.135V~3.465V |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PDSO-G8 |
| Function | Single-Chip Transceiver |
| Qualification Status | COMMERCIAL |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Interface | DS3, E3 |
| Number of Circuits | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Current - Supply | 120mA |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | N-CHANNEL |
| Drain Current-Max (Abs) (ID) | 6.7A |
| Drain-source On Resistance-Max | 0.026Ohm |
| Pulsed Drain Current-Max (IDM) | 60A |
| Avalanche Energy Rating (Eas) | 360 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| RoHS Status | Non-RoHS Compliant |
See Relate Datesheet