DMS2120LFWB-7
| Parameters | |
|---|---|
| Packaging | Cut Tape (CT) |
| Published | 2012 |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
| Additional Feature | HIGH RELIABILITY |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 8 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Power Dissipation-Max | 1.5W Ta |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 95m Ω @ 2.8A, 4.5V |
| Vgs(th) (Max) @ Id | 1.3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 632pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 2.9A Ta |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
| Vgs (Max) | ±12V |
| Continuous Drain Current (ID) | 2.9A |
| Gate to Source Voltage (Vgs) | 12V |
| Drain-source On Resistance-Max | 0.095Ohm |
| Drain to Source Breakdown Voltage | -20V |
| FET Feature | Schottky Diode (Isolated) |
| Height | 780μm |
| Length | 3mm |
| Width | 2mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 6 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-VDFN Exposed Pad |
| Number of Pins | 8 |
| Weight | 37.393021mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
See Relate Datesheet