| Parameters | |
|---|---|
| Radiation Hardening | No | 
| REACH SVHC | No SVHC | 
| RoHS Status | ROHS3 Compliant | 
| Lead Free | Lead Free | 
| Factory Lead Time | 16 Weeks | 
| Mount | Surface Mount | 
| Mounting Type | Surface Mount | 
| Package / Case | 6-PowerXDFN | 
| Number of Pins | 6 | 
| Transistor Element Material | SILICON | 
| Operating Temperature | -55°C~150°C TJ | 
| Packaging | Tape & Reel (TR) | 
| Published | 2012 | 
| JESD-609 Code | e4 | 
| Pbfree Code | yes | 
| Part Status | Active | 
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 
| Number of Terminations | 3 | 
| ECCN Code | EAR99 | 
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) | 
| Additional Feature | HIGH RELIABILITY | 
| Subcategory | Other Transistors | 
| Technology | MOSFET (Metal Oxide) | 
| Terminal Position | DUAL | 
| Peak Reflow Temperature (Cel) | 260 | 
| Time@Peak Reflow Temperature-Max (s) | 40 | 
| JESD-30 Code | S-PDSO-N3 | 
| Number of Elements | 1 | 
| Configuration | SINGLE WITH BUILT-IN DIODE | 
| Number of Channels | 1 | 
| Power Dissipation-Max | 690mW Ta | 
| Operating Mode | ENHANCEMENT MODE | 
| Power Dissipation | 2.4W | 
| Case Connection | DRAIN | 
| Turn On Delay Time | 5 ns | 
| FET Type | P-Channel | 
| Transistor Application | SWITCHING | 
| Rds On (Max) @ Id, Vgs | 26m Ω @ 6.4A, 4.5V | 
| Vgs(th) (Max) @ Id | 1V @ 250μA | 
| Input Capacitance (Ciss) (Max) @ Vds | 2530pF @ 15V | 
| Current - Continuous Drain (Id) @ 25°C | 7.3A Ta | 
| Gate Charge (Qg) (Max) @ Vgs | 28.2nC @ 4.5V | 
| Rise Time | 15.1ns | 
| Drain to Source Voltage (Vdss) | 25V | 
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V | 
| Vgs (Max) | ±8V | 
| Fall Time (Typ) | 137.6 ns | 
| Turn-Off Delay Time | 23.5 ns | 
| Continuous Drain Current (ID) | 7.3A | 
| Gate to Source Voltage (Vgs) | 8V | 
| Drain Current-Max (Abs) (ID) | 6A | 
| DS Breakdown Voltage-Min | 25V | 
| Height | 350μm | 
| Length | 2.05mm | 
| Width | 2.05mm |