| Parameters | |
|---|---|
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | S-PDSO-N5 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 2.3W Ta |
| Operating Mode | ENHANCEMENT MODE |
| Factory Lead Time | 17 Weeks |
| Case Connection | DRAIN |
| Mount | Surface Mount |
| FET Type | P-Channel |
| Mounting Type | Surface Mount |
| Transistor Application | SWITCHING |
| Package / Case | 8-PowerVDFN |
| Rds On (Max) @ Id, Vgs | 5.5m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id | 1.3V @ 250μA |
| Number of Pins | 8 |
| Input Capacitance (Ciss) (Max) @ Vds | 4621pF @ 10V |
| Transistor Element Material | SILICON |
| Current - Continuous Drain (Id) @ 25°C | 18A Ta 40A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 85nC @ 10V |
| Operating Temperature | -55°C~150°C TJ |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V 10V |
| Vgs (Max) | ±12V |
| Continuous Drain Current (ID) | 40A |
| Packaging | Tape & Reel (TR) |
| Drain-source On Resistance-Max | 0.007Ohm |
| DS Breakdown Voltage-Min | 20V |
| Avalanche Energy Rating (Eas) | 50 mJ |
| RoHS Status | ROHS3 Compliant |
| Published | 2007 |