DMP1022UFDE-7
| Parameters | |
|---|---|
| Turn-Off Delay Time | 117 ns |
| Continuous Drain Current (ID) | 9.1A |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 580μm |
| Length | 2.05mm |
| Width | 2.05mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-UDFN Exposed Pad |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2012 |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
| Additional Feature | HIGH RELIABILITY |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 6 |
| JESD-30 Code | S-PDSO-N3 |
| Number of Elements | 1 |
| Number of Channels | 2 |
| Power Dissipation-Max | 660mW Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.03W |
| Case Connection | DRAIN |
| Turn On Delay Time | 20 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 16m Ω @ 8.2A, 4.5V |
| Vgs(th) (Max) @ Id | 800mV @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2953pF @ 4V |
| Current - Continuous Drain (Id) @ 25°C | 9.1A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 42.6nC @ 5V |
| Rise Time | 28ns |
| Drain to Source Voltage (Vdss) | 12V |
| Drive Voltage (Max Rds On,Min Rds On) | 1.2V 4.5V |
| Vgs (Max) | ±8V |
| Fall Time (Typ) | 93 ns |
See Relate Datesheet