| Parameters | |
|---|---|
| Factory Lead Time | 17 Weeks | 
| Mount | Surface Mount | 
| Mounting Type | Surface Mount | 
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | 
| Number of Pins | 3 | 
| Weight | 3.949996g | 
| Transistor Element Material | SILICON | 
| Operating Temperature | -55°C~150°C TJ | 
| Packaging | Cut Tape (CT) | 
| Published | 2010 | 
| JESD-609 Code | e3 | 
| Pbfree Code | no | 
| Part Status | Active | 
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 
| Number of Terminations | 2 | 
| ECCN Code | EAR99 | 
| Terminal Finish | Matte Tin (Sn) | 
| Subcategory | FET General Purpose Power | 
| Technology | MOSFET (Metal Oxide) | 
| Terminal Form | GULL WING | 
| Peak Reflow Temperature (Cel) | 260 | 
| Time@Peak Reflow Temperature-Max (s) | 40 | 
| Pin Count | 4 | 
| JESD-30 Code | R-PSSO-G2 | 
| Number of Elements | 1 | 
| Number of Channels | 1 | 
| Power Dissipation-Max | 2.12W Ta | 
| Element Configuration | Single | 
| Operating Mode | ENHANCEMENT MODE | 
| Case Connection | DRAIN | 
| Turn On Delay Time | 3.2 ns | 
| FET Type | N-Channel | 
| Transistor Application | SWITCHING | 
| Rds On (Max) @ Id, Vgs | 36m Ω @ 12A, 10V | 
| Vgs(th) (Max) @ Id | 3V @ 250μA | 
| Input Capacitance (Ciss) (Max) @ Vds | 453pF @ 20V | 
| Current - Continuous Drain (Id) @ 25°C | 8.5A Ta | 
| Gate Charge (Qg) (Max) @ Vgs | 9.2nC @ 10V | 
| Rise Time | 11.7ns | 
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V | 
| Vgs (Max) | ±20V | 
| Fall Time (Typ) | 9.5 ns | 
| Turn-Off Delay Time | 11.6 ns | 
| Continuous Drain Current (ID) | 12.2A | 
| JEDEC-95 Code | TO-252AA | 
| Gate to Source Voltage (Vgs) | 20V | 
| Drain Current-Max (Abs) (ID) | 8.5A | 
| Drain to Source Breakdown Voltage | 40V | 
| Height | 2.39mm | 
| Length | 6.73mm | 
| Width | 6.22mm | 
| Radiation Hardening | No | 
| REACH SVHC | No SVHC | 
| RoHS Status | ROHS3 Compliant | 
| Lead Free | Lead Free |