DMN3010LSS-13
| Parameters | |
|---|---|
| Operating Temperature | -55°C~150°C TJ |
| Drain-source On Resistance-Max | 0.009Ohm |
| Drain to Source Breakdown Voltage | 30V |
| Packaging | Tape & Reel (TR) |
| Pulsed Drain Current-Max (IDM) | 64A |
| Height | 1.5mm |
| Published | 2008 |
| Length | 5.3mm |
| Width | 4.1mm |
| JESD-609 Code | e3 |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| Pbfree Code | yes |
| RoHS Status | ROHS3 Compliant |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | HIGH RELIABILITY |
| Subcategory | FET General Purpose Powers |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 8 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Power Dissipation-Max | 2.5W Ta |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.5W |
| Turn On Delay Time | 5.6 ns |
| FET Type | N-Channel |
| Factory Lead Time | 16 Weeks |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 9m Ω @ 16A, 10V |
| Mount | Surface Mount |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2096pF @ 15V |
| Mounting Type | Surface Mount |
| Current - Continuous Drain (Id) @ 25°C | 16A Ta |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Gate Charge (Qg) (Max) @ Vgs | 43.7nC @ 10V |
| Rise Time | 8ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Number of Pins | 8 |
| Fall Time (Typ) | 27 ns |
| Turn-Off Delay Time | 45 ns |
| Weight | 850.995985mg |
| Continuous Drain Current (ID) | 16A |
| Gate to Source Voltage (Vgs) | 20V |
| Transistor Element Material | SILICON |
See Relate Datesheet