DMG6402LVT-7

DMG6402LVT-7

MOSFET N-CH 30V 6A TSOT26


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMG6402LVT-7
  • Package: SOT-23-6 Thin, TSOT-23-6
  • Datasheet: PDF
  • Stock: 939
  • Description: MOSFET N-CH 30V 6A TSOT26 (Kg)

Details

Tags

Parameters
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 26
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Number of Channels 1
Power Dissipation-Max 1.75W Ta
Element Configuration Single
Turn On Delay Time 3.4 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 30m Ω @ 7A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 498pF @ 15V
Current - Continuous Drain (Id) @ 25°C 6A Ta
Gate Charge (Qg) (Max) @ Vgs 11.4nC @ 10V
Rise Time 6.2ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 2.8 ns
Turn-Off Delay Time 13.9 ns
Continuous Drain Current (ID) 6A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 6A
Height 900μm
Length 2.9mm
Width 1.6mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Factory Lead Time 23 Weeks
Mount Surface Mount
Mounting Type Surface Mount
See Relate Datesheet

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