DMG4435SSS-13

DMG4435SSS-13

P-Channel 30 V 20 mOhm Surface Mount Enhancement Mode Mosfet - SOP-8


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMG4435SSS-13
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 155
  • Description: P-Channel 30 V 20 mOhm Surface Mount Enhancement Mode Mosfet - SOP-8 (Kg)

Details

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Parameters
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 73.992255mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Digi-Reel®
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 20mOhm
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.5W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 8.6 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 16m Ω @ 11A, 20V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1614pF @ 15V
Current - Continuous Drain (Id) @ 25°C 7.3A Ta
Gate Charge (Qg) (Max) @ Vgs 35.4nC @ 10V
Rise Time 12.7ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 5V 20V
Vgs (Max) ±25V
Fall Time (Typ) 22.8 ns
Turn-Off Delay Time 44.9 ns
Continuous Drain Current (ID) 7.3A
Threshold Voltage -1.7V
Gate to Source Voltage (Vgs) 25V
DS Breakdown Voltage-Min 30V
Height 1.5mm
Length 4.95mm
Width 3.95mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 16 Weeks
Mount Surface Mount
See Relate Datesheet

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