DME201010R

DME201010R

Bipolar Transistors - BJT SM SIG BIPLR TRANS GL WNG 2.9x2.8mm


  • Manufacturer: Panasonic Electronic Components
  • Origchip NO: 590-DME201010R
  • Package: SC-74A, SOT-753
  • Datasheet: PDF
  • Stock: 440
  • Description: Bipolar Transistors - BJT SM SIG BIPLR TRANS GL WNG 2.9x2.8mm (Kg)

Details

Tags

Parameters
Polarity NPN, PNP
Element Configuration Dual
Power - Max 300mW
Gain Bandwidth Product 150MHz
Transistor Type NPN, PNP (Emitter Coupled)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 210 @ 2mA 10V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA / 500mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
hFE Min 210
Height 1.1mm
Length 2.9mm
Width 1.5mm
RoHS Status RoHS Compliant
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-74A, SOT-753
Number of Pins 5
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 300mW
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number DME20101
See Relate Datesheet

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