DMB53D0UV-7
| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Number of Pins | 6 |
| Weight | 3.005049mg |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Applications | General Purpose |
| Voltage - Rated | 45V NPN 50V N-Channel |
| Additional Feature | HIGH RELIABILITY |
| Subcategory | Other Transistors |
| Current Rating (Amps) | 100mA PNP 160mA N-Channel |
| Max Power Dissipation | 250mW |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 160mA |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 6 |
| Number of Elements | 1 |
| Polarity | NPN |
| Configuration | SINGLE WITH BUILT IN BIPOLAR TRANSISTOR AND DIODE |
| Number of Channels | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Transistor Application | SWITCHING |
| Drain to Source Voltage (Vdss) | 50V |
| Transistor Type | NPN, N-Channel |
| Continuous Drain Current (ID) | 160mA |
| Gate to Source Voltage (Vgs) | 12V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| DC Current Gain-Min (hFE) | 200 |
| Drain to Source Resistance | 3.1Ohm |
| VCEsat-Max | 0.3 V |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet