DF650R17IE4BOSA1

DF650R17IE4BOSA1

DF650R17IE4BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-DF650R17IE4BOSA1
  • Package: Module
  • Datasheet: PDF
  • Stock: 281
  • Description: DF650R17IE4BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 14 Weeks
Mount Screw
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 10
Transistor Element Material SILICON
Operating Temperature -40°C~150°C
Published 2002
Series PrimePack™2
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 10
ECCN Code EAR99
Max Power Dissipation 4.15kW
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 10
Qualification Status Not Qualified
Number of Elements 1
Configuration Single
Case Connection ISOLATED
Power - Max 4150W
Transistor Application POWER CONTROL
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.7kV
Max Collector Current 930A
Current - Collector Cutoff (Max) 5mA
Collector Emitter Breakdown Voltage 1.7kV
Voltage - Collector Emitter Breakdown (Max) 1700V
Collector Emitter Saturation Voltage 2V
Turn On Time 720 ns
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 650A
Turn Off Time-Nom (toff) 1870 ns
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 54nF @ 25V
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
See Relate Datesheet

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