DF160R12W2H3_B11

DF160R12W2H3_B11

IGBT MODULE VCES 1200V 150A


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-DF160R12W2H3_B11
  • Package: -
  • Datasheet: -
  • Stock: 155
  • Description: IGBT MODULE VCES 1200V 150A (Kg)

Details

Tags

Parameters
Factory Lead Time 28 Weeks
Surface Mount NO
Transistor Element Material SILICON
Published 2013
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 19
Additional Feature UL APPROVED
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-XUFM-X19
Number of Elements 4
Configuration COMPLEX
Case Connection ISOLATED
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn On Time 49 ns
Collector Current-Max (IC) 50A
Turn Off Time-Nom (toff) 375 ns
Collector-Emitter Voltage-Max 1200V
RoHS Status RoHS Compliant
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good