| Parameters | |
|---|---|
| Factory Lead Time | 11 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 15 hours ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| JESD-609 Code | e6 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Reach Compliance Code | not_compliant |
| JESD-30 Code | R-PDSO-G3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 1W Ta |
| Operating Mode | ENHANCEMENT MODE |
| Turn On Delay Time | 7.5 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 6.5 Ω @ 170mA, 4.5V |
| Vgs(th) (Max) @ Id | 1.3V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 140pF @ 20V |
| Current - Continuous Drain (Id) @ 25°C | 350mA Ta |
| Gate Charge (Qg) (Max) @ Vgs | 2.1nC @ 4.5V |
| Rise Time | 7.3ns |
| Drain to Source Voltage (Vdss) | 250V |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
| Vgs (Max) | ±10V |
| Fall Time (Typ) | 43 ns |
| Turn-Off Delay Time | 23 ns |
| Continuous Drain Current (ID) | 350mA |
| Gate to Source Voltage (Vgs) | 10V |
| Drain Current-Max (Abs) (ID) | 0.35A |
| Drain-source On Resistance-Max | 7.2Ohm |
| DS Breakdown Voltage-Min | 250V |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |