| Parameters | |
|---|---|
| Vgs (Max) | ±12V |
| Fall Time (Typ) | 28 ns |
| Turn-Off Delay Time | 30 ns |
| Continuous Drain Current (ID) | 3.5A |
| Gate to Source Voltage (Vgs) | 12V |
| Drain to Source Breakdown Voltage | 20V |
| Height | 900μm |
| Length | 2.9mm |
| Width | 1.6mm |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2010 |
| JESD-609 Code | e6 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Bismuth (Sn/Bi) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Pin Count | 3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 1W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1W |
| Turn On Delay Time | 6.2 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 71m Ω @ 1.5A, 4.5V |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 260pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 3.5A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 2.8nC @ 4.5V |
| Rise Time | 19ns |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |